The optical frequency comb serves as a powerful tool for distance measurement by integrating numerous stable optical modes into interferometric measurements, enabling unprecedented absolute measurement precision. Nonetheless, due to the periodicity of its pulse train, the comb suffers from measurement dead zones and ambiguities, thereby impeding its practical applications. Here, we present a linear group delay spectral interferometer for achieving precise full-range distance measurements. By employing a carefully designed linear group delay (LGD) device for phase modulation of the comb modes, interference can occur and be easily measured at any position. Our approach effectively eliminates the dead zones and ambiguities in comb-based ranging, without the need for cumbersome auxiliary scanning reference devices or reliance on complex high-repetition-rate combs or high-resolution spectrometers. We conducted length metrology experiments using a mode-locked comb referenced to a rubidium clock, achieving a large nonambiguity range up to 0.3 m, covering the entire measurement period. The maximum deviation compared to a laser interferometer was less than 1.5 μm, and the minimum Allan deviation during long-term measurements reached 5.47 nm at a 500 s averaging time. The approach ensures high accuracy while maintaining a simple structure, without relying on complex external devices, thereby propelling the practical implementation of comb-based length metrology.

Inverse design focuses on identifying photonic structures to optimize the performance of photonic devices. Conventional scalar-based inverse design approaches are insufficient to design photonic devices of anisotropic materials such as lithium niobate (LN). To the best of our knowledge, this work proposes for the first time the inverse design method for anisotropic materials to optimize the structure of anisotropic-material based photonics devices. Specifically, the orientation dependent properties of anisotropic materials are included in the adjoint method, which provides a more precise prediction of light propagation within such materials. The proposed method is used to design ultra-compact wavelength division demultiplexers in the X-cut thin-film lithium niobate (TFLN) platform. By benchmarking the device performances of our method with those of classical scalar-based inverse design, we demonstrate that this method properly addresses the critical issue of material anisotropy in the X-cut TFLN platform. This proposed method fills the gap of inverse design of anisotropic materials based photonic devices, which finds prominent applications in TFLN platforms and other anisotropic-material based photonic integration platforms.

NaI(TI)探测器是典型的闪烁体辐射探测器，其探测过程涉及辐射能量沉积、可见光信号产生与输运、光电转换与信号处理等物理过程。首先利用蒙特卡罗方法、Birks公式及射线追迹程序，开展了射线粒子在晶体中转为可见光输出过程的计算分析，并结合光电倍增管和信号处理电路的指标参数进行模拟仿真，得出探测器最终输出的脉冲电压信号参数；然后，在¹³⁷Cs源辐射场中采用Φ50 mm×50 mm NaI(TI)晶体耦合光电倍增管开展实验验证，实验测得探测器输出脉冲信号的上升/下降时间比为0.39，与模拟计算数值0.36相比，相差约7.69%，表明模拟计算模型的输出结果与实测数据基本符合，初步证明了论文的模拟计算模型及计算分析过程的正确性。论文提出的方法，对于深入理解辐射粒子激发的荧光可见光在晶体闪烁体中的传输规律和闪烁体辐射探测器系统的优化设计，具有一定参考意义。

The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension (JTE) structures for power devices. However, achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon. Many previously reported studies adopted many new structures to solve this problem. Additionally, the JTE structure is strongly sensitive to the ion implantation dose. Thus, GA-JTE, double-zone etched JTE structures, and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage. They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes. This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad. Presently, the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

In this paper, we studied the dynamics of a dispersion-tuned swept-fiber laser both experimentally and theoretically. By adding a dispersion compensation fiber and an electro-optic modulator in the laser cavity, an actively mode-locked laser was obtained by using intensity modulation, and wavelength sweeping was realized by changing the modulation frequency. Using a high-speed real-time oscilloscope, the dynamic behaviors of the swept laser were investigated during wavelength switching, static-sweeping cycle, and continuous sweeping, respectively. It was found that the laser generates relaxation oscillation at the start of the sweeping mode. The relaxation oscillation process lasted for about 0.7 ms, and then the laser started to operate stably. Due to the nonlinear effect, new wavelengths were generated in the relaxation oscillation process, which is not beneficial for applications. Fortunately, relaxation oscillation disappears if the laser starts up and operates in the continuous sweeping mode, and the good sweeping symmetry between the positive sweep and negative sweep increases the application potential of the laser. In addition, the instantaneous linewidth is almost the same as that in the static state. These results describe the characteristics of the laser from a new perspective and reveal, to the best our knowledge, the intensity dynamics of such lasers for the first time. This paper provides some new research basis for understanding the establishment process of dispersion-tuned swept-fiber lasers and their potential application in the future.

Ultra-high spectral purity lasers are of considerable research interests in numerous fields such as coherent optical communication, microwave photonics, distributed optical fiber sensing, gravitational wave detection, optical clock, and so on. Herein, to deeply purify laser spectrum with compact size under normal condition, we propose a novel and practical idea to effectively suppress the spontaneous radiation of the laser cavity through weak external distributed perturbation. Subsequently, a laser configuration consisting of a main lasing cavity and an external distributed feedback cavity is proposed. The feedback signal with continuous spatio-temporal phase transition controlled by a distributed feedback structure is injected into the main cavity, which can deeply suppress the coupling rate from the spontaneous radiation to the stimulated emission and extremely purify the laser spectrum. Eventually, an ultra-narrow linewidth on-chip laser system with a side mode suppression ratio greater than 80 dB, an output linewidth of 10 Hz, and a relative intensity noise less than -150 dB/Hz is successfully obtained under normal conditions. The proposed concept in this work provides a new perspective for extreme regulation of laser parameters by using weak external distributed perturbation, which can be valid for various gain-type lasers with wide wavelength bands.